Page 42 - PEN Ebook May 2021

Semiconductors Semiconductors

phase and in the modeling of C-V and I-V charac- istics and it is expected to provide much more

teristics. Different aspects have been concluded guidance that is valuable for the power converter ▶ [8] Z. Chen, “Characterization and modeling of high-switching-speed be- havior of
based on the comparison between simulation having High Frequency HF and high-density de- SiC active devices,” Master’s thesis, Virginia Polytechnic Institute and State Univ.,
and experiment. It can be concluded that the signing with SiC MOSFET. Blacksburg, USA, 2009.
model experimented here has the ability of com-

For More Information ▶ [9] M. R. Ahmed, R. Todd, and A. J. Forsyth, “Predicting SiC MOSFET behavior under

hard-switching, soft-Switching, and false turn-on condi- tions,” IEEE Transactions
on Industrial Electronics, vol. 64, no. 11, pp. 9001–9011, 2017.
▶ [1] S. Yin, K. J. Tseng, R. Simanjorang, Y. Liu, and J. Pou, “A 50-kW high-frequency

and high-efficiency SiC voltage source inverter for more electric aircraft,” IEEE
▶ [10] J. Wang, H. S.-h. Chung, and R. T.-h. Li, “Characterization and experimental
Trans. Ind. Electro., vol. 64, no. 11, pp. 9124– 9134, 2017.
assessment of the effects of parasitic elements on the MOS- FET switching

performance,” IEEE Transactions on Power Electronics, vol. 28, no. 1, pp. 573–590,
▶ [2] F. Wang, Z. Zhang, T. Ericsen, R. Raju, R. Burgos, and D. Boroyevich, “Advances in
2013.
Power Conversion and Drives for Shipboard Systems,” Proceedings of the IEEE, vol.
103, no. 12, pp. 2285–2311, 2015.
▶ [11] M. Liang, T. Q. Zheng, and Y. Li, “An Improved Analytical Model for Predicting

the Switching Performance of SiC MOSFETs,” Journal of Power Electronics, vol. 16,
▶ [3] X.Ding, M.Du, T. Zhou, H. Guo and C. Zhang, “Comprehensive comparison
no. 1, pp. 374–387, 2016.
between silicon carbide MOSFETs and silicon IGBTs based traction systems for

electric vehicles,” Applied energy, vol. 194, pp. 626– 634, 2017.
▶ [12] X.Wang,Z.Zhao,K.Li,Y.Zhu,andK.Chen,“Analytical Methodology for Loss

Calculation of SiC MOSFETs,” IEEE Journal of Emerging and Selected Topics in
▶ [4] X. She, A. Q. Huang, O. Lucia, and B. Ozpineci, “Review of silicon carbide power
Power Electronics, vol. 7, no. 1, pp. 71–83, 2019.
devices and their applications,” IEEE Transactions on Industrial Electronics, vol. 64,

no. 10, pp. 8193–8205, 2017.
▶ [13] T. Liu, R. Ning, T. T. Y. Wong, and Z. J. Shen, “Modeling and analysis of SiC
MOSFET switching oscillations,” IEEE Journal of Emerging and Selected Topics in
▶ [5] L. Zhang, X. Yuan, X. Wu, C. Shi, J. Zhang, and Y. Zhang, “Performance evaluation
Power Electronics, vol. 4, no. 3, pp. 747–756, 2016.
of high-power SiC MOSFET modules in comparison to Si IGBT modules,” IEEE

Transactions on Power Electronics, vol. 34, no. 2, pp. 1181–1196, 2019.
▶ [14] Analytical Modeling of Switching Characteristics of the SiC MOSFET Based on
Finite State Machine Yingzhe Wu1 , Shan Yin2 , and Hui Li1 1 School of Astronautics
▶ [6] T. R. McNutt, A. R. Hefner, H. A. Mantooth, D. Berning, and S.-H. Ryu, “Silicon
and Aeronautics, University of Electronic Science and Technology of China,
carbide power MOSFET model and parameter extraction sequence,” IEEE
Chengdu, China 2 Microsystem & Terahertz Research Center, China Academy of
Transactions on Power Electronics, vol. 22, no. 2, pp. 353–363, 2007.
Engineering Physics, Chengdu, China

▶ [7] S. Yin, P. Tu, P. Wang, K. J. Tseng, C. Qi, X. Hu, M. Zagrodnik, and R. Simanjorang,

“An accurate subcircuit model of SiC half-bridge module for switching-loss
optimization,” IEEE Transactions on Industry Applications, vol. 53, no. 4, pp. 3840–

3848, 2017.

42 MAY 2021 | www.powerelectronicsnews.com MAY 2021 | www.powerelectronicsnews.com 43
prehensively assessing the switching character-