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Semiconductors Semiconductors

phase and in the modeling of C-V and I-V charac- istics and it is expected to provide much more

teristics. Different aspects have been concluded guidance that is valuable for the power converter ▶ [8] Z. Chen, “Characterization and modeling of high-switching-speed be- havior of
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model experimented here has the ability of com-

For More Information ▶ [9] M. R. Ahmed, R. Todd, and A. J. Forsyth, “Predicting SiC MOSFET behavior under

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Calculation of SiC MOSFETs,” IEEE Journal of Emerging and Selected Topics in
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no. 10, pp. 8193–8205, 2017.
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▶ [14] Analytical Modeling of Switching Characteristics of the SiC MOSFET Based on
Finite State Machine Yingzhe Wu1 , Shan Yin2 , and Hui Li1 1 School of Astronautics
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and Aeronautics, University of Electronic Science and Technology of China,
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Chengdu, China 2 Microsystem & Terahertz Research Center, China Academy of
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Engineering Physics, Chengdu, China

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“An accurate subcircuit model of SiC half-bridge module for switching-loss
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42 MAY 2021 | www.powerelectronicsnews.com MAY 2021 | www.powerelectronicsnews.com 43
prehensively assessing the switching character-