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Semiconductors Semiconductors

combined with a current probe

TCP312A (30 A, 100 MHz) [14].

Results and Analysis

The conditions that have been
used for this experiment were
Table 1: features of FSM during Turn on state. vdc= 600 /400 V, iL=15 A, and
Rg (ex) varies from 10 to 47
Ω [14]. Calculation of the vds
involves the voltage drops on

them as the practical measure-
Figure 2: fitted and measured CV characteristics. Figure 3: fitted and measured IV characteristics. ment in the lead inductances
of the MOSFET (Ld and Ls).
JUNCTION CAPACITANCE MODELING OF SWITCHING From the simulation results
AND TRANSCONDUCTANCE STATES WITH FSM Table 2: features of FSM during Turn off state. it can be clearly stated that

MODELING Interactions of the sub-stages in the process of nected with the source that provides the voltage/ the analytical model can be used to assess the
C-V characteristic curves illustrate the Si based switching transient are illustrated by the adop- current that is necessary for achieving the con- switching characteristics of the SiC MOSFET. The

device and SiC MOSFET nonlinearity of junction tion of the FSM. Figure 4 shows the flow chart of version between the signal interfaces and elec- results have also shown that the high frequency
capacitances. The curve fitting of the C-V charac- the FSM. Significant features of the FSM during trical interfaces [14]. Table 3 shows the values of EMI can be reduced but at the cost of switching
teristics has the ability of interpreting the mod- the Turn-on and Turn-off Transient are shown in the parasitic parameters. loss [14].
eling of these capacitances. Figure 2 shows the the Table 1 and Table 2 respectively.
comparison between the fitted and measured Experiment Setup
C-V characteristic curves whereas Figure 3 shows Fig.5 shows the setup of the experiment. In this CONCLUSION
the comparison between the fitted and measured SIMULATION AND EXPERIMENT experiment C3M0120090D and CVFD20065A Analytical modeling that is based on the FSM has
I-V characteristic curves which allow the charac- Simulation Environment from Wolfspeed are chosen as the SiC MOSFET been elaborated for the evaluation of the switch-
terization of transconductance. Output terminals (Vds, Vak, and Id) along with and SiC SBD [14]. A double pulse signal has been ing characteristics in terms of transient response

the FSM in the half-bridge block have been con- used to govern the gate drive that is generated speed, switching loss and HF EMI noise for SiC
from the DSPc [14]. Lecroy Wave-Runner 8404-M MOSFET has been explained in this article. FSM
is used for obtaining the switching waveforms. is used to model the switching transient analyt-
Voltage probe PPE2KV (2 kV, 400 MHz) is used to ically, it is responsible for the characterization
measure the voltage of the drain source whereas and analysis of each sub-stage in the transition
the drain current is measured with the help of
the scaled-down current transformer (CT) that is

Figure 4: Flow Chart of FSM. Table 3: value of parasitic parameters. Figure 5: Experimental Setup.

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