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Design Design

Figure 4: Comparison between Si and SiC modules.
THEORETICAL COMPARISON section Standard Si rectifier diodes that are fast

OF THE TWO SIMILARLY SIZED in nature are used in this system. Reduction in
RECTIFIER MODULES the SiC rectifier diodes can be observed in the
Figure 5: Protype of converter with SiC rectifier diodes.
Here is a comparison of same size Si and SiC snubber power dissipation to the amount of the
modules. The voltage is set at 600V and the value 15W despite of switching frequency at the 40kHz. and SiC diodes along with a detailed case study in the cost and the size of the components of
of the snubber capacitor has been selected to be It has the advantages of being highly efficient, it for an in-depth understanding of the concept. the snubber. SiC devices are actually expensive
the optimal value to minimize the overshoot of allows using smaller components and it is not SiC Schottky Diodes have the ability of increas- so it is recommended to limit the usage of these
the voltage [1]. associated with any increased level of heat so it ing efficiency, reducing the size and reducing the devices and altern with some other best availa-
will eventually deal with a lesser amount of heat. cost of the DC-DC converters that are isolated ble option so that a significant advantage can be
in nature. A proper use of Schottky diodes have gained from it. All the data has been collected
CASE STUDY ON SI DIODE the potency of reducing the losses of the snub- from the authentic source.
500W power is dissipating in the snubber cir- CONCLUSION ber in the rectifier circuit, thus resulting in a

cuit in 50kW DC-DC converter at 10kHz which This article has given a handy and brief yet reduction in the switching losses. Furthermore,
means that 1% of the total power in the output informative knowledge about the SiC Schottky a great amount of reduction has been observed
region has been dissipated only in the snubber diodes, their advantage, a comparison between Si
For More Information

▶ [1] Efficiency Improvement of EV Fast Charger using SiC Schottky Diodes APEC

2020 New Orleans, LA Leif Amber Engineering Manager.

▶ [2] An SiC-Based AC/DC CCM Bridgeless Onboard EV Charger With Coupled Active

Voltage Doubler Rectifiers for 800-V Battery Systems Mehdi Abbasi, IEEE Student

Member and John Lam, IEEE Senior Member Advanced Power Electronics Laboratory
for Sustainable Energy Research Dept. of Electrical Engineering and Computer

Science Lassonde School of Engineering, York University Toronto, M3J 1P3, Canada

36 MAY 2021 | www.powerelectronicsnews.com MAY 2021 | www.powerelectronicsnews.com 37