Page 21 - EE Times Europe Magazine | April2019

EE|Times EUROPE 21

High Power with SiC and GaN

These are the absolute maximum ratings: HD pin voltage, –1.3 V to
600 V; HB pin voltage, –15 V to 600 V; DC output current, 1 A for the
BRD1X60C, 1.7 A for the BRD1X61C, 3 A for the BRD1X63C, 5.5 A for
the BRD1X65C; and junction temperature, –40°C to 150°C.

650-V ENHANCEMENT-MODE GaN TRANSISTOR
GaN Systems’ GS66508T (Figure 7) is an enhancement-mode GaN-
on-Si power transistor. The properties of GaN allow for high-current,
high-voltage breakdown and high switching frequency. GaN Systems
implements patented Island Technology cell layout for high-current
die performance and yield. GaNPX packaging enables low inductance
and low thermal resistance in a small package.
The GS66508T is a top-side-cooled transistor that offers very
low junction-to-case thermal resistance for demanding high-power
applications. Its features combine to provide very high-efficiency
power switching. Its numerous applications include high-efficiency
power conversion, high-density power conversion, AC/DC converters,
bridgeless totem pole PFC, zero-voltage switching (ZVS) phase-
shifted full-bridge/half-bridge topologies, synchronous buck or
boost, uninterruptible power supplies, industrial motor drives, single
inverter legs, solar and wind power, fast battery charging, Class D
audio amplifiers, 400-V input DC/DC converters, on-board battery
chargers, and traction drives.
To evaluate the entire GaN Systems 650-V family of GaN E-HEMT
Figure 6: BlueSwitch half-bridge motor driver products, designers can use the universal motherboard with daughter-
(Image: Power Integrations) cards (sold separately). ■

Giovanni Di Maria is a programmer, educator, technical writer, and
EEWeb.com contributor.

Complete solution on
sheet metal

stamping & fabrication
Figure 7: largest size for sheet metal processing 4MX1M
A GS66508T 650-V
GaN transistor and
its evaluation board ❖ more than 3,000 part
(Image: GaN Systems) numbers have been
PPAP approved
❖ more than 5 million
Euro invested in CNC
(PM) or brushless DC (BLDC) motor drives. The BridgeSwitch driver and Robotic arms
incorporates two high-voltage N-channel power FREDFETs with low-
and high-side drivers in a single small-outline package. The internal
FREDFETs offer ultra-soft and ultra-fast diodes ideally suited for
hard-switched inverter drives. Both drivers are self-supplied, thus
eliminating the need for an external auxiliary power supply.
BridgeSwitch provides a unique instantaneous phase current out-
put signal, simplifying implementation of sensorless control schemes.
The low-profile, compact-footprint surface-mount package offers
extended creepage distances and allows heat-sinking of both power
FREDFETs through the PCB. The driver offers internal fault-
protection functions and external system-level monitoring. Internal
fault protection includes cycle-by-cycle current limit for both FRED- Sun Strong
FETs and two-level thermal overload protection. External Precision Metal International Ltd
system-level monitoring includes DC bus sensing with four under- Rm. 7-9, 12/F., Peninsula Tower, 538 Castle Peak
Road, Cheung Sha Wan, kowloon, Hong Kong
voltage levels and one overvoltage level, as well as driving external Website: www.sunstrongmetal.com
sensors. The bidirectional bused single-wire status interface reports Email: stantam@sunflymetal.com
observed status changes. Tel: (852) 2171 1968
Rm. 7-9, 12/F., Peninsula Tower, 538 Castle Peak Road,
Cheung Sha Wan, kowloon, Hong Kong
www.eetimes.eu | APRIL 2020
EET201902_Sun Strong.indd 1 2020/2/11 下午5:06