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                                                                EE|Times EUROPE

                                  SiC MOSFETs for the Next Generation of EVs


                                                                                      DC-DC Converters
                                                                                         High Voltage
                                                                                          to 500 VDC Out
                                                                                          High Power
                                                                                            to 50 Watts
                                                                                       NEW HiQP Input
                                                                                      Voltage Available!

                                                                                     125-475 VDC Input

                                                                                         Regulated/Isolated
                                                                                                              QP
           Figure 2: Cree’s Wolfspeed 650-V MOSFET is designed to minimize both switching and                HiQP
           conduction losses. (Image: Cree/Wolfspeed)                                                    Series Isolated

           Those benefits are a natural fit for EVs and data centers, as well as telecom power, UPS [uninter-
           ruptible power supplies], solar inverters, and others.”
             The 15- and 60-mΩ, 650-V, AEC-Q101–qualified devices, using third-generation Cree C3M
           MOSFET technology, offer lower switching losses and lower on-state resistance than previous
           solutions. The MOSFETs provide 75% lower switching losses and 50% lower conduction losses
           than silicon equivalents, resulting in a potentially 300% increase in power density. Increased   Standard Input Ranges
           efficiency and faster switching speeds allow customers to design smaller solutions with higher
           performance.                                                                      5, 12, 24, 48  &
             “Power supply designers can achieve maximum efficiency in their products when they use   Now HiQP! 125-475 VDC
           silicon carbide, enabling them to get either more power out of the same form factor or the same   High Voltage, Isolated Outputs
           power out of a smaller form factor, or [they can] maximize power density to reduce size, weight,
           or cost,” said Cameron. “The properties of the silicon carbide substrate are absolutely critical.   5 VDC-500 VDC
           For example, as a cousin to diamond — the best heat conductor in nature — silicon carbide has   to 50 Watts, Efficiency to 90%
           vastly superior thermal performance over silicon. The easier it is to get the heat out, the cooler   Consult Factory for Custom Modules:
           the device runs, which multiplies the effect of the low on-resistance change over temperature   Available to optimize your designs, Special
                                                               [Figure 3].”               Input or Output Voltages Available
                                                                Full SiC modules are        Miniaturized Size package:
                                                               becoming more widely          2.5" x 1.55" x 0.50"
                                                               available, both in         Safe: Short Circuit, Over/Under
                                                               standard footprints and   Voltage, and Over Temp. Protected
                                                               new module designs       Options Available: Expanded Operating
                                                                                                  0
                                                                                                        0
                                                               optimized around the    Temperature, -55 C to +85 C Environmental
                                                               WBG material.            Screening, Selected from MIL-STD-883
                                                                “Our release of the        Ruggedized for Operation in
                                                               XM3 family of 1,200-V          Harsh Environments
                                                               silicon carbide half       External Bias Control: For Charge
                                                               bridges shows the               Pump Applications
                                                               improvements possible   Rely on Pico for Thousands of ULTRA Miniature,
                                                               when packaging is        High Reliability DC-DC Converters, AC-DC
                                                               designed with silicon    Power Supplies, Inductors and Transformers
                                                               carbide in mind,” said   VISIT OUR EXCITING NEW WEBSITE
                                                               Cameron. “We also      www.picoelectronics.com
                                                               actively support module   E-Mail: info@picoelectronics.com
           Figure 3: Normalized drain-source on-resistance versus    manufacturers in the   Pico Representatives
           temperature for a range of devices (Image: Cree/Wolfspeed)  development of modules   England
                                                               based on our silicon car-  Solid State Supplies/Ginsbury
           bide die, and they have been able to achieve excellent performance with their innovative designs.”  E-mail: russell.bennett@sssltd.com
             The strong adoption of SiC solutions has been driven by ever-increasing demands for   Phone: 44 1634 298900. •  Fax: 44 1634 290904
           performance in a range of industrial applications. According to market research, the most   Belgium/Luxemburg/France
                                                                                         Netherlands/Scandinavia
           profitable markets for new power devices will be electric mobility and self-driving vehicles,   ELCOS/BVBA
           in which WBG semiconductors will be used in inverters, OBCs, and LiDAR anti-collision   E-mail: info@elcos.be
           systems. This is no surprise, given that the thermal characteristics and efficiency of the new   Phone: 32 3 218 20 73•. www.elcos.be
           devices meet demands to optimize the performance of the accumulators. ■               Germany
                                                                                        ELBV/Electra Bauemente Vertrieb
           Maurizio Di Paolo Emilio is a staff correspondent at AspenCore, editor of Power Electronics   E-mail: info@elbv.de • Phone: 49 089 460205442
                                                                                              Fax: 49 089 460205442
           News, and editor-in-chief of EEWeb.

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