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SiC MOSFETs for the Next Generation of EVs
DC-DC Converters
High Voltage
to 500 VDC Out
High Power
to 50 Watts
NEW HiQP Input
Voltage Available!
125-475 VDC Input
Regulated/Isolated
QP
Figure 2: Cree’s Wolfspeed 650-V MOSFET is designed to minimize both switching and HiQP
conduction losses. (Image: Cree/Wolfspeed) Series Isolated
Those benefits are a natural fit for EVs and data centers, as well as telecom power, UPS [uninter-
ruptible power supplies], solar inverters, and others.”
The 15- and 60-mΩ, 650-V, AEC-Q101–qualified devices, using third-generation Cree C3M
MOSFET technology, offer lower switching losses and lower on-state resistance than previous
solutions. The MOSFETs provide 75% lower switching losses and 50% lower conduction losses
than silicon equivalents, resulting in a potentially 300% increase in power density. Increased Standard Input Ranges
efficiency and faster switching speeds allow customers to design smaller solutions with higher
performance. 5, 12, 24, 48 &
“Power supply designers can achieve maximum efficiency in their products when they use Now HiQP! 125-475 VDC
silicon carbide, enabling them to get either more power out of the same form factor or the same High Voltage, Isolated Outputs
power out of a smaller form factor, or [they can] maximize power density to reduce size, weight,
or cost,” said Cameron. “The properties of the silicon carbide substrate are absolutely critical. 5 VDC-500 VDC
For example, as a cousin to diamond — the best heat conductor in nature — silicon carbide has to 50 Watts, Efficiency to 90%
vastly superior thermal performance over silicon. The easier it is to get the heat out, the cooler Consult Factory for Custom Modules:
the device runs, which multiplies the effect of the low on-resistance change over temperature Available to optimize your designs, Special
[Figure 3].” Input or Output Voltages Available
Full SiC modules are Miniaturized Size package:
becoming more widely 2.5" x 1.55" x 0.50"
available, both in Safe: Short Circuit, Over/Under
standard footprints and Voltage, and Over Temp. Protected
new module designs Options Available: Expanded Operating
0
0
optimized around the Temperature, -55 C to +85 C Environmental
WBG material. Screening, Selected from MIL-STD-883
“Our release of the Ruggedized for Operation in
XM3 family of 1,200-V Harsh Environments
silicon carbide half External Bias Control: For Charge
bridges shows the Pump Applications
improvements possible Rely on Pico for Thousands of ULTRA Miniature,
when packaging is High Reliability DC-DC Converters, AC-DC
designed with silicon Power Supplies, Inductors and Transformers
carbide in mind,” said VISIT OUR EXCITING NEW WEBSITE
Cameron. “We also www.picoelectronics.com
actively support module E-Mail: info@picoelectronics.com
Figure 3: Normalized drain-source on-resistance versus manufacturers in the Pico Representatives
temperature for a range of devices (Image: Cree/Wolfspeed) development of modules England
based on our silicon car- Solid State Supplies/Ginsbury
bide die, and they have been able to achieve excellent performance with their innovative designs.” E-mail: russell.bennett@sssltd.com
The strong adoption of SiC solutions has been driven by ever-increasing demands for Phone: 44 1634 298900. • Fax: 44 1634 290904
performance in a range of industrial applications. According to market research, the most Belgium/Luxemburg/France
Netherlands/Scandinavia
profitable markets for new power devices will be electric mobility and self-driving vehicles, ELCOS/BVBA
in which WBG semiconductors will be used in inverters, OBCs, and LiDAR anti-collision E-mail: info@elcos.be
systems. This is no surprise, given that the thermal characteristics and efficiency of the new Phone: 32 3 218 20 73•. www.elcos.be
devices meet demands to optimize the performance of the accumulators. ■ Germany
ELBV/Electra Bauemente Vertrieb
Maurizio Di Paolo Emilio is a staff correspondent at AspenCore, editor of Power Electronics E-mail: info@elbv.de • Phone: 49 089 460205442
Fax: 49 089 460205442
News, and editor-in-chief of EEWeb.
www.eetimes.eu | JUNE 2020