Page 10 - PEN eBook May 2023

COVER STORY – DESIGN
by up to 64%. Additionally, the maximum temperature
at the hotspot of the converter on the primary side
decreases by 7.5°C.
EFFICIENCY MEASUREMENTS UNDER
SOFT-SWITCHING CONDITIONS:
TESTING A 1-KW IBC FOR DATA
CENTERS
This 1-kW, 4:1, fixed-frequency LLC IBC operates as a
DCX from an input that may vary from 42 V to 60 V.
Figure 6: Schematic of the 1-kW IBC board with an FB LLC on The soft-switching techniques employed in the
the primary side LLC resonant topology allow a significant efficiency
improvement in telecom and server power supplies. 6–8
The primary side uses Infineon’s latest trench MOSFET
technology, OptiMOS™ 6, employing 100-V devices In Figure 6, two OptiMOS™ 6 80-V power MOSFETs
(ISC030N10NM6) with R DS(on),max = 3.0 mΩ. These devices housed in a SuperSO8 package are paralleled on the
come in a SuperSO8 package (PQFN 5 × 6 mm ) and primary-side FB. An FB configuration is formed using
2
replace the BSC050N10NS5 from the predecessor four OptiMOS™ 5 25-V IQE006NE2LM5 source-down
OptiMOS™ 5 technology, which had a higher R DS(on),max devices (PQFN 3.3 × 3.3 mm ) in parallel as SRs. The
2
of 5.0 mΩ (also coming in a SuperSO8 package). On turns ratio of the transformer is 4:1. The resonant
the secondary side, the system uses 80-V MOSFETs frequency of the LLC converter is 310 kHz. The
as SRs. It utilizes either four paralleled OptiMOS™ 5 switching frequency is fixed to match the resonance
BSC040N08NS5 devices with R DS(on),max = 4 mΩ and a frequency of the tank. Zero-voltage switching for
SuperSO8 package from the predecessor technology, or the primary switches and zero-voltage/zero-current
four paralleled OptiMOS™ 6 ISZ053N08NM6 devices with switching for the SR switches are thus achieved by
i
the industry’s lowest R DS(on),max of 5.3 mΩ and a smaller design.
PQFN 3.3 × 3.3-mm package.
2
The significantly improved device parameters of
The results obtained from the comparison of the new OptiMOS™ 6 80 V not only improve the
measured efficiencies, presented in Figure 5, highlight overall efficiency of the converter but also allow the
the advantages of adopting OptiMOS™ 6 technology. two paralleled SuperSO8 OptiMOS™ 5 80-V power
Compared with the previous generation, the solution MOSFETs BSC030N08NS5 with R DS(on),max = 3 mΩ on
employing OptiMOS™ 6 technology demonstrates the primary side to be replaced by just one OptiMOS™
impressive efficiency improvements in excess of 0.4% 6 ISC014N08NM6 device, with the industry’s lowest
i
from 20% load up to full load. Using a smaller package R DS(on) of 1.45 mΩ. Figure 7 compares the efficiency for
footprint reduces the PCB area allocated for SR devices this case, revealing an improvement over the full load
range, with up to 0.8% better values using the latest
device technology. Additionally, the single device of the
new generation remains even cooler than if two devices
from the previous generation are used.
CONCLUSION
This article discusses Infineon’s latest OptiMOS™ 6
trench MOSFET technology, featuring the new 80-V and
100-V power MOSFET devices.
The new OptiMOS™ 6 devices surpass their
predecessors in all critical parameters, offering
a combination of low on-state resistance and
superior switching performance. With a focus on
high-switching–frequency applications like telecom
SMPS and solar energy systems, this technology
Figure 7: Efficiency in the 1-kW LLC IBC comparing the new holds immense potential for bringing significant
and predecessor technology improvements to various other application fields.
i This product will launch soon. For engineering samples, click here to place a request.
10 MAY 2023 | www.powerelectronicsnews.com
COVER STORY – DESIGN
The advances in overall device performance are
remarkable, resulting from significant improvements at May 9–11, 2023: Visit us at PCIM Europe in Nuremberg
a device technology level. These improvements led to
the creation of a unique device structure, the first to You’re invited to join Infineon’s presentation of the latest
employ a 3D charge compensation in conjunction with trends in silicon power semiconductors and wide-bandgap
a metal gate in a trench power MOSFET. As a result, technologies at our demo stations, specifically tailored to your
this technology reduces on-resistance, dramatically application of interest. Discover how our solutions address
lowers gate- and gate-drain charges and improves the today’s challenges in green and digital
switching homogeneity across the device area. These transformation through our new product
achievements translate into a significant enhancement demos, live TechTalks on stage or
in system efficiency in various applications across personal conversations with our experts.
different load conditions. Meet us at Messe Nürnberg event
grounds (Hall 7, Booth 412).
The efficiency measurements carried out on several
SMPS applications under both hard- and soft-switching
conditions confirm the remarkable findings at the
semiconductor device level. Depending on the topology
and load condition, it is possible to raise efficiency To learn more about the latest power MOSFET
by up to 1%, further highlighting the superiority of technology family and its potential to revolutionize the
this new technology. Additionally, the much-improved telecom power arena and other application fields, we
device performance reduces the number of devices encourage you to visit our webpage.
required by up to 50% without any adverse effect on
the device temperature, demonstrating its potential to
significantly lower costs and improve overall system
reliability.
References
▶ 1Williams et al. (2017). “The Trench Power MOSFET: Part I - History, Technology, and Prospects.” IEEE
Transactions on Electron Devices, Vol. 64, No. 3, pp. 674–691.
▶ 2Ejury, J., Hirler, F., & Larik, J. (2001). “New P-Channel MOSFET Achieves Conventional N-Channel MOSFET
Performance.” PCIM.
▶ 3Schlögl et al. (2005). “A new robust power MOSFET family in the voltage range 80 V – 150 V with superior
low RDSon, excellent switching properties and improved body diode.” EPE.
▶ 4Siemieniec et al. (2022). “A new power MOSFET technology achieves a further milestone in efficiency.”
EPE.
▶ 5Li, S. (2020). “Intermediate Bus Converters for High-Efficiency Power Conversion: A Review.” IEEE Texas
Power and Energy Conference (TPEC).
▶ 6Liu, R., & Lee, C.Q. (1988). “Analysis and design of LLC-type series resonant converter.” IEE Electron
Device Letters, Vol. 24, No. 24, pp. 1517–1519.
▶ 7Yang et al. (2002). “LLC resonant converter for front end DC/DC conversion.” APEC.
▶ 8Jung, J., & Kwon, J. (2007). “Theoretical Analysis and Optimal Design of LLC Resonant Converter.” EPE.
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