Page 48 - PEN eBook July 2023
P. 48

Design



            To test bidirectional switching, Figure 4 illustrates the circuit schematics for the specific current
            direction. Low-R     cascode MOSFETs are used to drive B-TRAN as a normally off switch like an
                             DS(on)
            IGBT. These devices can block high voltage in their off state and conduct high current with low loss

            in their on state.


            “Our conduction losses are less than half of the conventional semiconductors,” Brdar said. “We
            actually enable applications like a solid-state circuit breaker, where conduction losses really drive
            the design.” Inductor L1 and fast-recovery diode D1 are connected across the inductor as part of
            the DPT.


            B-TRAN CHARACTERIZATION
                                                                         Initial measurements of B-TRAN dies

                                                                         and packaged devices are conducted
                                                                         using  a  Keithley  high-power  test
                                                                         system.  Breakdown  voltage  and
                                                                         leakage  current  are  measured  by
                                                                         ramping  up  the  voltage  across  the
                                                                         device while monitoring the current.
                                                                         A  breakdown  voltage  of  1,280  V  is

                                                                         measured, and leakage currents are
                                                                         measured to be 25 µA at 1,000 V and
                                                                         45  µA  at  1,200  V,  which  confirms
                                                                         the basic steady-state performance
                                                                         parameters.  The  emitter-emitter
                                                                         saturation voltage and current gain
            Figure 5: Forward drop, V   versus current I   for different V  levels  (β) are measured to be 0.6–0.8 V and
                                EE(on)          E(A)          BE
                                                                         7 A, respectively.



            Output characteristics for three values of V  are shown in Figure 5, indicating an almost linear
                                                        BE
            relationship between the forward-voltage drop, V     and the output current (I ) for each V . When
                                                            E1E2(on)                     E1          BE
            more current is injected into the base by increasing V , the forward-voltage drop is significantly
                                                                  BE
            reduced. This feature allows the modulation of R       by changing the base-emitter voltage. The
                                                              DS(on)
            same output characteristics are obtained in the opposite direction.


            Figure 6 shows the DPT waveforms at 800 V/14 A. The bidirectional switching test is conducted

            using the same connection setup as shown in Figure 4, except that the diode (D1) and V  polarities
                                                                                                 DC
            are reversed to show the current flow from E2 to E1 terminals.


            Figure 7 shows the waveforms with a turn-on rise time of 50 ns and a turn-off fall time of 165 ns. The
            control signal, emitter-emitter voltage, and emitter current are labeled as 1, 3, and 2, respectively.




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