Page 45 - PEN eBook July 2023

Design

“Our aim is to develop a version of our technology that is optimized for bidirectional switching at high
speeds, utilizing silicon and later silicon carbide,” Daniel Brdar, CEO of Ideal Power, said during an
interview with Power Electronics News. With over 70 patents globally, B-TRAN presents a promising

technology for boosting the efficiency and effectiveness of power-conversion applications.

Compared with conventional power switches like SCRs, IGBTs and MOSFETs, B-TRAN offers
significant performance improvements. In fact, during silicon testing, the B-TRAN demonstrated
only 0.6-V V at 30-A load current, with a driving power of only 8.4 W (1.2 V × 7 A), resulting in a
CE(on)
total power loss of 26.4 W, which is considerably lower than that of IGBTs. These results showcase
the incredible potential of B-TRAN as a game-changer in power-conversion technology.

Brdar explained the uniqueness of B-TRAN: “When you think about a conventional semiconductor

power switch, you’re processing the wafer on one side. We’re processing the wafer on both sides,
so you have identical features on either side of the wafer that require very close alignment of those
features.”

DEVICE STRUCTURE

B-TRAN can be considered the ultimate development of power-semiconductor topologies. It is
considered the logical endpoint of the evolution of power-semiconductor topologies due to its

unique combination of performance, reliability and efficiency.

Figure 1: Architecture of different devices, including B-TRAN

In Figure 1, we have a variety of electronic devices made of silicon. The first one is called “open,”
which is made of pure silicon and is not useful for conducting electricity, but it’s great for insulating.
Next, we have a resistor made of doped silicon that can resist the flow of current due to impurities

JULY 2023 | www.powerelectronicsnews.com 45