Page 20 - PEN eBook July 2022

Thermal Management POWER SUPPLIES

To learn more about Infineon’s design solutions for SMPS that Power & Sensing Selection
meet the increasingly high demands of servers and data centers, Guide 2022
please click here. Also, discover our full spectrum of innovative

power technologies (Si, SiC, and GaN). For high-voltage power Speed up your component
MOSFETs, click here. For WBG solutions, click here. search. Download now.

References

▶ S. Preimel. (2018). “600 V CoolMOS™ G7 and 650 V CoolSiC™ G6 come in

a new top-side cooling package – the DDPAK.” Application Note, AN_1802_

PL52_1803.

▶ Infineon Technologies. (2020). “Recommendations for board assembly of

Infineon packages with dual row gullwing leads.” Rev. 5.0. Design Notes on

High-Voltage Power
▶ Infineon Technologies. (2021). “TO-leaded top-side cooled (TOLT) package

automotive power MOSFET.” Application Note v1.1, Z8F80044621.
Device Package

▶ Infineon Technologies. (2022). “TOLL vs. TOLT.” Application Note,

Z8F80127016. By Stefano Lovati, technical writer for EEWeb

▶ Infineon Technologies. (2021). “Innovative top-side cooled package
Renewable-energy applications, as well as all kinds of energy-efficiency technologies, require
solution for high-voltage applications.” Application Note v1.0, AN_2101_ reliable, compact, and thermal-efficient power devices. For driving innovation in wind turbines,

PL52_2103_112902. smart grids, solar power systems, solar photovoltaics, and electric-drive vehicles, devices with
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high power density, high switching frequency, and the ability to operate at extreme temperatures

▶ S. Preimel. “600 V CoolMOS CFD7 comes in a new top-side cooling package – and voltages are required. Demanding power applications impose challenges involving not only the
device itself but the package surrounding it.
the QDPAK.” Infineon Technologies. Application Note, to be published soon.

Even though silicon has long dominated power applications, demand for increased efficiency and
▶ B. Zojer. (2020). “CoolMOS™ gate drive and switching dynamics.” Application
power density, as well as enhanced performance and reduced costs, have prompted a paradigm
Note v1.0, AN_1909_PL52_1911_173913. change in power electronics toward wide-bandgap semiconductors like silicon carbide and gallium

nitride. Despite the fact that wide-bandgap devices have begun to enter the commercial market
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