Page 7 - PEN Ebook May 2021
P. 7

COVER STORY - DESIGN                                                                    Cover Story - Design


          To fulfill those requirements and contribute to a    PFC half-bridge, a different control strategy is

          greener and safer world through an overall ef-       required. In that case, the triangular current
          ficiency of 98 percent, it is crucial to achieve     mode (TCM) [3] extends the conduction time
          super high-efficiency levels in the power factor     to revert the inductor current and obtain zero
          correction (PFC). In this context, standard PFC      voltage switching (ZVS) operation. Nevertheless,
          topologies do face a limit, and a trend towards      due to the high inductor current ripple, inter-
          bridgeless PFC topologies like the continuous        leaving of at least two power stages is necessary.
          conduction mode (CCM) totem-pole PFC can be          Full ZVS operation leads to increased efficiency;
          observed [1]. The boost converter in the PFC appli-  however, the rise of part count requires a higher
          cation has been traditionally controlled in CCM. In   switching frequency to increase the power den-

          this operation mode, the half-bridge switches op-    sity. Furthermore, the control complexity (inter-
          erate mainly in hard-commutation, which avoids       leaving with variable switching frequency) raises
          the possibility of using silicon (Si) superjunction   significantly more. When Si SJ MOSFETs are used
          (SJ) MOSFETs. If keeping the costs low is the pri-   in a half-bridge configuration in CCM operation,
          mary driver in the design, Si isolated gate bipolar   high efficiency cannot be expected. Instead, even
          transistors (IGBT) with antiparallel silicon car-    catastrophic failures can happen [4]. The reasons
          bide (SiC) diode are the preferred option [2].       are to be found in the very high energy required

                                                               to charge and discharge the C OSS  of the devices,
          However, for high-end applications, if Si SJ MOS-    together with the significantly high reverse recov-
 Achieving the highest   FETs (such as Infineon’s CoolMOS™ transistor   ery losses of the intrinsic body diode of the Si SJ

          products) are implemented in the totem-pole
                                                               MOSFETs (Figure 1).
 efficiency in CCM



 totem-pole PFC designs




 Innovative solutions with Si superjunction (SJ)


 CoolMOS™ MOSFETs



 By Rafael Garcia, Principal System Applications Engineer, Server and Telecom
 SMPS, Infineon Technologies



 INTRODUCTION  plies (SMPS) are required to achieve this. Inevi-

 In server and telecom SMPS applications, the   tably, the output power levels of the SMPS have
 highest efficiency and power density are not only   to reach higher levels while maintaining the same
 buzzwords but clear market trends. Given the   form factors. This demanding combination ex-
 actual situation, there is an essential need for   plains why power density is gaining importance.
 increased server capacities and fast connectivity   Next to performance, system cost down, as well
 for real-time data transmission. Highly efficient   as modularity, and design simplicity are also in
 server and telecom switched-mode power sup-  focus.  Figure 1: Half-bridge capacitance variation for Si SJ CoolMOS™.


 6  MAY 2021 | www.powerelectronicsnews.com                            MAY 2021 | www.powerelectronicsnews.com       7
   2   3   4   5   6   7   8   9   10   11   12