Page 6 - PEN Ebook May 2021
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COVER STORY - DESIGN                                                                                                                                                                                  Cover Story - Design


                                                                                                                                 To fulfill those requirements and contribute to a    PFC half-bridge, a different control strategy is

                                                                                                                                 greener and safer world through an overall ef-       required. In that case, the triangular current
                                                                                                                                 ficiency of 98 percent, it is crucial to achieve     mode (TCM) [3] extends the conduction time
                                                                                                                                 super high-efficiency levels in the power factor     to revert the inductor current and obtain zero
                                                                                                                                 correction (PFC). In this context, standard PFC      voltage switching (ZVS) operation. Nevertheless,
                                                                                                                                 topologies do face a limit, and a trend towards      due to the high inductor current ripple, inter-
                                                                                                                                 bridgeless PFC topologies like the continuous        leaving of at least two power stages is necessary.
                                                                                                                                 conduction mode (CCM) totem-pole PFC can be          Full ZVS operation leads to increased efficiency;
                                                                                                                                 observed [1]. The boost converter in the PFC appli-  however, the rise of part count requires a higher
                                                                                                                                 cation has been traditionally controlled in CCM. In   switching frequency to increase the power den-

                                                                                                                                 this operation mode, the half-bridge switches op-    sity. Furthermore, the control complexity (inter-
                                                                                                                                 erate mainly in hard-commutation, which avoids       leaving with variable switching frequency) raises
                                                                                                                                 the possibility of using silicon (Si) superjunction   significantly more. When Si SJ MOSFETs are used
                                                                                                                                 (SJ) MOSFETs. If keeping the costs low is the pri-   in a half-bridge configuration in CCM operation,
                                                                                                                                 mary driver in the design, Si isolated gate bipolar   high efficiency cannot be expected. Instead, even
                                                                                                                                 transistors (IGBT) with antiparallel silicon car-    catastrophic failures can happen [4]. The reasons
                                                                                                                                 bide (SiC) diode are the preferred option [2].       are to be found in the very high energy required

                                                                                                                                                                                      to charge and discharge the C OSS  of the devices,
                                                                                                                                 However, for high-end applications, if Si SJ MOS-    together with the significantly high reverse recov-
          Achieving the highest                                                                                                  FETs (such as Infineon’s CoolMOS™ transistor         ery losses of the intrinsic body diode of the Si SJ

                                                                                                                                 products) are implemented in the totem-pole
                                                                                                                                                                                      MOSFETs (Figure 1).
          efficiency in CCM



          totem-pole PFC designs




          Innovative solutions with Si superjunction (SJ)


          CoolMOS™ MOSFETs



          By Rafael Garcia, Principal System Applications Engineer, Server and Telecom
          SMPS, Infineon Technologies



          INTRODUCTION                                         plies (SMPS) are required to achieve this. Inevi-

          In server and telecom SMPS applications, the         tably, the output power levels of the SMPS have
          highest efficiency and power density are not only    to reach higher levels while maintaining the same
          buzzwords but clear market trends. Given the         form factors. This demanding combination ex-
          actual situation, there is an essential need for     plains why power density is gaining importance.
          increased server capacities and fast connectivity    Next to performance, system cost down, as well
          for real-time data transmission. Highly efficient    as modularity, and design simplicity are also in
          server and telecom switched-mode power sup-          focus.                                                            Figure 1: Half-bridge capacitance variation for Si SJ CoolMOS™.


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