Page 19 - Power Electronics News - December 2020

Test & Measurements SEMICONDUCTORS

Power Electronics News: What are the Alan Wadsworth: As mentioned before,
requests of your clients in the GaN characterization of GaN devices is critical for
Market, in particular for the energy designers in the markets you’ve mentioned. The

sector? industry is struggling to measure the dynamic
Mike Hawes: Based on the issues discussed characteristics of GaN devices with such high
in item #2, many customers want an off-the- voltage and current requirements, combined with
shelf, standardized, and supported solution to the high switching speed (i.e. bandwidth) require-
accurately characterize the switching behaviour ments. Parasitics in the characterization equip-
of GaN devices. This is typically accomplished ment and setup often mask the real dynamic
using what is known as the double-pulsed test performance of the GaN devices being tested,

method. In 2019, Keysight introduced a commer- developing new low inductance approaches to
cially available double-pulse test (DPT) solution the DPT fixture design, as well as current meas-
(PD1500A) for silicon and SiC devices, that has urement and even connection of the device to
been installed at several customer locations the fixture.
worldwide. Keysight enabled the PD1500A to ac-
cept a customized GaN DUT board, to allow DPT Models need to be improved to consider the high
for GaN HEMT and GaN GIT devices. GaN cascode frequency characteristics of the GaN devices

devices should be supported shortly. Although coupled with simulators that accurately consider
a customized GaN DUT board is required, the a distributed circuit analysis, which is capable
PD1500A is now capable of being configured to of simulating high frequency effects. Because
test discrete Si MOSFETs, IGBTs, SiC MOSFETs of the temperatures of power converters used
and GaN MOSFETs, in alternative energy and e-mobility, modeling/ The next-Gen 4 SiC
simulation needs to correctly portray the thermal
effects of the design.
Power Electronics News: GaN is designed Technology
to provide solutions for some of the It is an exciting time for power conversion de-
major societal challenges in the fields signers. However, as typical with new technology By Maurizio Di Paolo Emilio, Editor-in-Chief of Power Electronics News and EEWeb
of digitalization, energy efficiency, and changes, additional modeling, characterizing and

mobility of the future. What are the reliability testing is required to enable the GaN The advantages of silicon carbide (SiC) devices for Delivered 14 new SiC FET products with Industry’s
technologies that can offer innovation power semiconductor to achieve high expecta- use in power electronics are driven by high ma- lowest R DS(on) at <10mΩFETs and high-performance
for leadership in T&M market? tions in these markets. terial performance, high breakdown voltage, and 4-lead kelvin package. SiC FETs are a major con-
thermal conductivity. The strong market momen- tributor to performance and reliability improve-
tum of automotive inverter companies developing ments, with overall system cost reduction in
For More Information SiC solutions, growing over the period 2020-2024, next-generation data centers.

will quickly drive SiC device revenues above the $1
billion thresholds, as shown in Figure 1. Generation 3 of SiC products has seen an excit-
▶ Keysight
ing market with a wide range of applications. It is
In 2019 SiC became a key factor in many growth a mature technology that has directed UnitedSiC
▶ PD1500A
markets such as electric vehicles, battery chargers, towards Gen 4 technology for even higher voltages
and IT infrastructure. SiC has seen the produc- and even lower R ds(on) resistance. The next genera-
▶ GaN Test&Measurements tion capacity of many companies grow by offer- tion of technology is under development, but prod-
ing increasingly efficient products. UnitedSiC has ucts will be launched later this year.

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