Page 55 - PEN eBook July 2023
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Semiconductors
on-resistance. As a result, the device can survive short-circuit conditions for much longer than a
traditional structure would. As shown in Figure 6, the Rohm device can remain in short-circuit for
5.54 µs before failure. This is a significant improvement over the two competitive products used
for comparison.
The combination of low on-resistance, minimal parasitic capacitance and high short-circuit
endurance makes these SiC MOSFETs extremely efficient and reliable. When combined with the
simplicity of single-supply gate bias, these devices are a perfect fit for many of the high-voltage,
high-power switching applications seen within EV charging stations.
SiC DIODES: THE NEXT GENERATION OF AUTOMOTIVE
INNOVATION
High-speed, high-voltage diodes are a critical component in EV charging systems, particularly in
LLC resonant inverters. Rohm’s third generation of Schottky barrier diodes (SBDs) employs its
proprietary SiC construction to achieve high reverse breakdown voltage with minimal parasitic
capacitive charge. This enables very fast reverse-recovery times that are insensitive to operating
temperature. Figure 7 demonstrates the improvement in reverse recovery when comparing SiC
diodes with their traditional counterparts.
Rohm’s SiC SBDs also offer excellent forward-voltage drop for reduced power consumption,
extremely low reverse current and high tolerance to current pulses. Figure 8 presents a comparison
of these SiC devices to three competitive diodes.
Figure 7: Diode reverse-recovery time comparison
JULY 2023 | www.powerelectronicsnews.com 55
