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            POWERING THE FUTURE
           Wide-Bandgap Semiconductors: The Next

           Wave of GaN and SiC


           By Gina Roos


                  spenCore’s PowerUP Expo 2021
                  devoted a full day to wide-bandgap
                  semiconductors, specifically gallium
           A nitride and silicon carbide. The
           WBG panel discussion focused on “the next
           wave of GaN and SiC,” taking its cue from
           the day’s topic presentations, including new
           product developments, technology challenges,
           and wafer manufacturing.
             Thanks to their savings in size, weight, and
           cost, as well as their higher efficiency, GaN
           and SiC power devices are making big pushes
           beyond fast chargers and renewable energy
           into data centers, motor drivers, electric vehi-
           cles, and other e-mobility applications.
             The panel comprised six industry experts.
           The panelists in the GaN market were Alex
           Lidow, CEO and co-founder of EPC, who
           discussed GaN integration technology;
           Stephen Olivier, vice president of corporate
           marketing and investor relations at Navitas
           Semiconductor, who examined GaN’s role in
           electrification; and Caroline O’Brien, CEO of
           Kubos Semiconductors, who highlighted the
           company’s cubic-GaN technology for LEDs.
                                               EPC’s 100-V, 65-A ePower chipset — EPC23101 eGaN IC + EPC2302 eGaN FET — delivers
                                               96% efficiency at 1-MHz switching frequency and 97% efficiency at 500-kHz switching
           GaN and SiC power devices           frequency. (Source: EPC)
           are making big pushes
           beyond fast chargers and            GaN: EFFICIENCY AND CARBON SAVINGS  drift is reduced, O’Brien said.
                                                                                     Similarly, GaN power device manufactur-
           renewable energy into motor         Kubos’s O’Brien kicked off the panel with an   ers like Navitas are focused on delivering
                                               introduction to the company’s new mate-
           drivers, EVs, and other             rial technology, cubic-GaN for LEDs. The   technologies and devices that support
           e-mobility applications.            next generation in lighting innovations is   electrification, which, in turn, reduces the
                                                                                   world’s reliance on fossil fuels.
                                               assumed to be the existing LED technology,
                                               but she counters that Kubos’s cubic-GaN   “Today, over 80% of the energy that
                                               LED technology could deliver a further 20%   becomes electricity is based on fossil fuels,”
             The SiC panelists were Pete Losee, director   to 40% increase in efficiency. This trans-  said Navitas’s Olivier. “One of the ways that
           of technology development at UnitedSiC   lates into a carbon footprint and carbon   we can improve that and shift from 20%
           (recently acquired by Qorvo), who discussed   savings of nearly 700 million tons of CO   2  renewables and electrical loads to 80% is by
           his company’s expanding portfolio with the   emissions over five years in lighting and   using GaN, which is a big push toward the
           750-V Gen 4 product series; Paul Kierstead,   displays, she said.       electrification of our world.
           global director of power product market-  O’Brien said the new cubic-GaN can elim-  “When we look at the small size of a GaN
           ing at Wolfspeed, who covered SiC’s role   inate the inefficiencies in green and amber   component and how we can integrate fea-
           in renewable energy power conversion and   lights and offer opportunities in producing   tures and functions and reduce components
           storage; and Rob Rhoades, president and   solutions that not only can be more efficient   from legacy systems, we can have up to a 10×
           CTO of X-trinsic, who provided insight into   but also would improve color rendering and   smaller CO  footprint than a silicon equiva-
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           SiC wafer manufacturing.            mimic daylight more effectively.    lent,” he said.
             Common themes among the panelists   The “green gap,” or drop in efficiency in   “Every time we ship a GaN power IC,
           included efficiency and integration, along   green and amber LEDs, is said to reduce the   we reduce 4 kg of CO . That’s a huge net
                                                                                                  2
           with reducing the world’s reliance on fossil   performance and increase the cost and size    benefit by using new technology. We believe
           fuels with the help of WBG semiconductors.   of RGBs. With cubic-GaN technology, the   that we can accelerate the transition from
           Panelists also agreed that the move to    quantum-confined stark effect and electric   internal-combustion-engine cars to EVs
           200-mm wafers, coming soon, will be a further   fields are eliminated, providing benefits in   by three years worldwide and reduce road
           cost savings.                       scale and longer wavelengths, and spectral   sector emissions by 20%, in all addressing a

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