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AspenCore Guide

to Gallium Nitride

A New Era for Power Electronics

As silicon reaches its theoretical performance limits for power electronics,
industry is shifting toward wide-bandgap materials like gallium nitride

(GaN), whose properties provide clear benefits in power converters for
consumer and industrial electronics. This book delves into GaN technology

and its importance for power electronics professionals engaged with its
implementation in power devices.

Foreword: Alex Lidow, CEO of Efficient
Power Conversion (EPC)
Market Overview: Yole Développement
Technology Analysis: Elena Barbarini, System Plus
Consulting; Filippo Di Giovanni, STMicroelectronics;
Alex Lidow, EPC; Chris Lee, Power Integrations; Dilder
Chowdhury, Nexperia; Stephen Oliver and Dan
Kinzer, Navitas Semiconductor; Stefano Lovati and
Davide Di Gesualdo, EEWeb; Paul Wiener, GaN Systems;
and Professor Alex Q. Huang, Tianxiang Chen, and
Ruiyang Yu, University of Texas at Austin. In addition,
there are reports from Jens Tybo Jensen, Jun Honda,
and Pawan Garg, Infineon Technologies; Max Zafrani,

EPC Space; Kasyap Patel, Wolfspeed, a Cree Company;
Andrea Vinci, Tektronix; and Gerald Deboy,

Infineon Technologies.
Tech papers: Keysight, ON Semiconductor, Cadence,
United Monolithic Semiconductors, Transphorm,
Nexperia, and CEA-Leti

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Edited by Maurizio Di Paolo Emilio, Nitin Dahad, EE Times
Publisher: AspenCore Media
Available in PDF and Hard Copy (Limited Edition)