Page 48 - EE Times Europe Magazine | February 2020
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46 EE|Times EUROPE — Boards & Solutions Insert



              POWER MANAGEMENT
            Simplify Your Driver for Power Applications


            By Maurizio Di Paolo Emilio

                      ith the emergence of new fields
                      of application and markets,
                      global power requirements have
            W skyrocketed in recent years,
            making energy savings an essential aspect of
            equipment design. This has made high-
            efficiency inverter circuits and converters
            indispensable, especially for power supplies
            and drivers requiring high power conversion.
              Along with the need to achieve high
            efficiency, the challenges of reducing the
            device size have increased. This reduction is
            generally achieved by increasing the operat-
            ing frequency. That increase, in turn, requires
            more complex drivers and optimization of
            the drive voltage of the silicon carbide (SiC)
            MOSFET or IGBT.
              The objective of increasing efficiency
            while reducing device size has increased the
            demand for high-performance power devices   Figure 1: Soft turn-off protection (Image: Tamura)
            and gate drivers. The market is therefore
            expected to expand for SiC power devices,
            which epitomize high efficiency and are   the insulation voltage to   k , according    some freedom in arranging the module
            increasingly popular in new-generation   to the company.                layout to maximize efficiency and minimize
            inverters. SiC diodes are already used in the   Most of the modules are rated for maxi-  noise. Tamura has designed its own planar
            power-factor correction (PFC) circuits of   mum output power of about 1 0 kW, but a   transformer, which is suitable for the 1, 00-
            power supplies and high-power inverters, and   “ in1” driver unit able to provide up to    module series.
            SiC MOSFETs are increasingly used in switch-  1 MW is also available. First-generation (up to   The company’s GDMs include several
            ing applications. SiC MOSFETs can improve   1,200- ) products include the driver module   protection modes, such as soft turn-off. As
            inverter efficiency by enabling high-speed   and driver unit. Second-generation (up to   shown in Figure 1, by adding a resistor to the
            switching, along with circuit layout of fault   1, 00- ) devices also include three-level    soft turn-off pin, it is possible to define the
            protection and configuration to reduce the   DC DC converters and a  in1 driver unit.  turn-off time.
            noise generated in the gate control circuit.  Depending on the specific application,   A Miller clamp function in the GDM pre-
                                                designers can decide whether to design a   vents malfunction of the SiC power module
            TAMURA GATE DRIVER MODULE           complete driver around the DC DC converter   with a low threshold voltage and high d  dt.
            With a core competency in magnetic circuits,   or use the 2in1 solution (module and driver   This protection prevents an increase in gate
            Tamura has several years of experience in the   units). Tamura says that its all-in-one solu-  voltage due to the Miller current of the power
            development of SiC IGBT gate driver modules   tion saves the time and costs required by a full   device connected to the output pin. Finally, an
            (GDMs). The company targets the design of   design activity, and the company cites other   active clamp gate feature protects the power
            highly integrated devices, such as modules,   benefits of its modules as well.   module from surges affecting the collec-
            rather than individual components. The   For example, suppose there is a problem   tor-emitter voltage ( CE) signal.
            modules simplify circuit design because they   with common-mode noise, and we want to
            are essentially plug-and-play  Designers need   eliminate any malfunction caused by it. A   ROHM, TI, MAXIM, AND INFINEON
            only define the input and output signals, and   typical solution would be to raise the d  dt,   RO M Semiconductor has created gate
            everything else is performed internally by the   but that requires low parasitic capacitance.   drivers with an integrated isolator that
            module, according to Tamura.        Tamura modules have very low stray capac-  takes full advantage of the performance of
              A notable characteristic of the gate driver   itance (  pF for the 2DD series and 12 pF for   IGBT and MOSFET power. The BM610 F
            module is that the gate-driving signal is   the 2DMB series) and therefore can suppress   integrates short-circuit protection, while
            transmitted using magnetic coupling, a   the common-mode noise that results from   the BM6001 F ’s simple design accelerates
            technology with which Tamura has extensive   high d  dt, preventing equipment malfunc-  the product development process, according
            experience. Its modules are available both in   tion due to noise propagation to the input   to RO M. The gate drivers are housed in
            a standalone version (“driver module”) and   side and the other channels.   compact packages that the company says
            with a connector board (“driver unit”) able   The driver circuit internal impedance   are the smallest in the industry to include
            to fit on a corresponding power module from   is a very low  0 m  or less, even at higher   the isolator. The products combine the
            any manufacturer. Tamura looks to optimize   switching frequencies, according to Tamura    company’s Bi-CDMOS technology with new
            the footprint and profile of its modules and   therefore, switching speed is not inhibited   on-chip-transformer technology.
            recently introduced devices that swap out a   by the gate impedance. The small module   Late last year, Texas Instruments intro-
            larger transformer for a planar equivalent.   packages fit within the footprint of most   duced isolated gate drivers with integrated
            Switching to the planar transformer increased   power module types, affording the designer   detection for IGBTs and SiC MOSFETs. The

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