Page 3 - PEN eBook February 2024

VIEWPOINT

COMPACT. EFFICIENT. SILENT. Wafer-Level Test

and Burn-In

INFUSED BY INNOVATION. Advances WBG

Reliability

Wafer-level test and burn-in is a critical procedure higher-power–conversion applications. Optimizing
in the semiconductor industry, ensuring the the packaging can aid in making the most of GaN’s
reliability and quality of semiconductor devices. advantages. In this issue, an article describes the
These processes are essential for detecting and copper-clip CCPAK packaging, which was showcased
correcting potential flaws and malfunctions early at the PowerUP Virtual Expo in December 2023, for
in the manufacturing process before packaging and cascode power GaN devices.
delivery to customers. By conducting these tests
at the wafer stage, manufacturers can identify and We can all agree that lowering carbon emissions
resolve issues promptly, minimizing the chances of is crucial for our civilization. The best way to
defective devices entering the market. In this issue, accomplish this, however, is still up for debate.
Vernon Rogers, EVP of sales and marketing at Aehr As opposed to standard fossil fuels, which
Test Systems, discusses the importance of these are composed of hydrocarbons and generate
innovative testing methodologies. carbon dioxide when burned, using hydrogen can
significantly reduce greenhouse gas emissions.
Rogers noted the company’s ability to evaluate the Crucially, when hydrogen is employed in a fuel-cell
quality and reliability of semiconductors, including system, its waste product is limited to water. This
emerging materials like gallium nitride and silicon subject will be examined by Ben Crawford, business
carbide. These advanced testing techniques play development manager of Kohler Power Systems
a crucial role in assessing the dependability and (now Kohler Energy).
excellence of semiconductor devices, ensuring
they meet the stringent standards of the industry. Other topics are EV charging station design, an
With the rise of new materials like GaN and SiC, it innovative architecture of offline AC/DC
becomes even more vital to employ thorough testing power-conversion solutions, understanding the
processes to maintain the integrity of semiconductor impact of gate-source and power loops, battery
products and meet the demands of evolving testing and silicon carbide. The enhanced efficiency
technologies. provided by SiC can be attributed to its impact on
magnetic elements. High currents are required for
WE meet @ APEC GaN is highly compatible with electric-vehicle battery charging, which usually calls for big coils.
applications. It enables high power density, Increasing the component switching frequency is the
which contributes to the miniaturization of power key to minimizing size. The difficult part of designing
electronics components, which is advantageous in charging systems is keeping them small and simple
EVs, where space and weight considerations are without being too bulky.
State of the Art Power Modules Highlights significant. Saumitra Jagdale, contributing writer for
The MagI³C FIMM Fixed Isolated MicroModule series combines the features of • LGA-7 housing (9 mm x 7 mm x 3.1 mm) Power Electronics News, has analyzed the features of Yours Sincerely,
an isolated power module with those of a classic MicroModule. It is realized in • Ambient temp range from -40 °C to +125 °C
an LGA-7 housing and impresses with its miniaturized dimensions. The 1 W • Typ. 8 pF parasitic coupling capacitance the thermal aspects of GaN power devices. Maurizio Di Paolo Emilio
output power can be provided up to an ambient temperature of TA = 100 °C • Efficiency up to 91 % Editor-in-Chief, Power Electronics News
without derating. Features like continuous short circuit protection (SCP) and • Certified according UL62368-1 In terms of GaN design, using a depletion-mode
dynamic power boost up to 300 mA for 500 ms ensures a robust performance • Dynamic and static power boost HEMT device, the cascode design with power GaN
for industrial applications. The module complies with EN55032 (CISPR-32)
class B conducted and radiated emissions standard and requieres no external devices has several benefits for
components for operation.
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