Page 22 - PEN eBook October2023
P. 22
DESIGN
Silicon Never Fails to
Surprise: The Case
for Superjunction
MDmesh
By Filippo Di Giovanni, director of strategic marketing, innovation and key
programs for the power transistor subgroup at STMicroelectronics
In the last few years, the semiconductor power market has experienced increasing interest in
adopting wide-bandgap (WBG) power devices like silicon carbide and gallium nitride. Especially
in SiC, STMicroelectronics has raced to undisputed global leadership via early entry and customer
success in electric vehicles. Moreover, the need for increasingly efficient products from the industrial
sector will continue to propel the market. Interestingly, while much of the industry’s excitement
has focused on success in these emerging technologies, ST has continued to innovate and invest
in advanced, high-voltage, silicon-based power MOSFETs using its high-voltage (i.e., above 250 V)
proprietary technology called MDmesh, where “MD” stands for “multiple drain” and “mesh” refers
to its specific horizontal structure.
38 OCTOBER 2023 | www.powerelectronicsnews.com
