Page 74 - PEN eBook July 2023
P. 74
SEMICONDUCTORS
Gen 4 SiC FETs Provide
Lowest On-Resistance
in TOLL Package
By Maurizio Di Paolo Emilio, editor-in-chief of Power Electronics News
Qorvo’s Gen 4 silicon carbide field-effect transistor (SiC FET) is a type of power transistor that can
handle high voltages and currents. Compared with traditional silicon-based transistors, SiC FETs
offer several advantages, including lower losses, higher efficiency and better thermal performance.
These advantages make SiC FETs ideal for use in several power electronics applications.
Qorvo’s Gen 4 SiC FET features the latest SiC technology, which enables it to deliver the highest
levels of performance. The device is optimized for high-voltage power converters and can handle
74 JULY 2023 | www.powerelectronicsnews.com
