Page 33 - PEN eBook July 2023
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CoolSiC™ MOSFET for industrial drive trollers, gate drivers, passive components and
applications topologies need to be reviewed and adapted
to the higher switching frequency operation.
Presented by Niclas Thon, System Application The 1.2 kW GaN CCM Totem-Pole PFC refer-
Engineer, Infineon
ence power stage is here introduced to com-
Industrial drives have a long history in power bine the new 65mOhm E-mode G-HEMT™, the
electronics as application. In the recent years, STM32G4 featuring a high-resolution timer for
drive manufacturers are putting a strong- very high switching frequency operation and
er focus into enhancing power density and the STGAP2G galvanic isolated gate driver de-
efficiency. With CoolSiC™ MOSFET technology signed to drive GaN devices to reach 99% effi-
Infineon provides a solution to such require- ciency for easy thermal design and compliance
ments. A technical comparison is presented to challenging 80 Plus Titanium specification.
between silicon-based IGBT7 TRENCHSTOP™
technology, optimized for general-purpose
drive applications, and CoolSiC™ MOSFET Nexperia
technology. This comparison was conduct-
ed under typical drive conditions, including
consideration of dV/dt restrictions of <5V/ns, MOSFET device analysis at your
to assess the thermal performance of differ- fingertips with interactive datasheets
ent power semiconductors in identical motor Presented by Stein Nesbakk, Marketing
drives. Engineer, Nexperia
Allowing engineers to visualize the interaction
between parameters such as gate voltage,
STMicroelectronics drain current, RDS(on) and temperature, the
collective contribution to the device behavior
Next Steps in Density and Efficiency can now be displayed dynamically in tables or
with ST PowerGaN in 1.2 kW GaN graphs. Nexperia’s interactive datasheets can
CCM Totem-Pole PFC Implementation significantly increase productivity by eliminat-
ing the time needed for an engineer to per-
Presented by Gianni Vitale, Application
Director, STMicroelectronics form manual calculations or set up and debug
a circuit simulation. Whether you are a Design
Power density and efficiency for switching Engineer looking to see how a device will per-
converters has made a major step forward form at elevated temperature, or a Component
with the presence in the market of Gallium Engineer trying to compare devices under dif-
nitride (GaN) technology, superior perfor- ferent test conditions, interactive datasheets
mances of the new WBG technology are now are designed to make your life easier.
driving the development of consumer chargers
towards miniaturization and targeting power
conversion stages in server and EV applica-
tions. Along with the GaN technology, con-
CLICK HERE TO WATCH ON DEMAND >
JULY 2023 | www.powerelectronicsnews.com 33
