Page 25 - PEN eBook July 2023
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Semiconductors



            conduction protection, can now be realized. These complete circuits are packaged into a single
            and simple-to-use component. This article will cover DC-to-DC and BLDC motor drive application
            examples that benefit from monolithic half-bridge integration.


            INTRODUCING THE ePOWER STAGE eGaN IC FAMILY

            The EPC23102, EPC23103 and EPC23104 form a family of next-generation monolithically integrated
            half-bridge ePower Stages, as shown in Figure 1. The devices are rated at 100 V and are available in
            a 3.5 × 5.0-mm PQFN package that makes layout and design simple.










































            Figure 1: Overview of the half-bridge ePower Stage family



            EPC monolithic ICs combine the excellent switching performance of GaN transistors with the good
            thermal capabilities of QFN packages; as a result, GaN monolithic ICs make it possible to increase
            the switching frequency of the converter, keeping the switching losses and the temperature increase
            low. The EPC2310x family includes enhanced features like switch-node slew-rate programming;
            3.3-V and 5-V logic-compatible, synchronous bootstrap supply; and enable function.



            Monolithic ICs allow designs to shrink to a single QFN component, the half-bridge cell, which is
            composed of at least one gate driver and two discrete FETs in conventional Si MOSFET–based
            inverters. Moreover, increasing the switching frequency allows reduction of the input filter, so the
            overall weight and volume of the converter are reduced.




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