Page 24 - PEN eBook July 2023

SEMICONDUCTORS

Performance

Benefits of Next-Gen

Monolithic Integrated

GaN Half-Bridge Power

Stages in DC-to-DC

and BLDC Motor Drive

Applications

By Michael de Rooij, vice president of applications engineering; Alejandro Pozo
Arribas, senior applications engineer; Federico Unnia, applications engineer;
Marco Palma, director of motor drive systems and applications; and Brandon
Perez, applications lab assistant, all at Efficient Power Conversion (EPC)

Enhancement-mode gallium nitride (eGaN) FETs from EPC have demonstrated higher performance
over silicon MOSFETs in many applications, and the lateral structure of eGaN FETs makes it possible
to monolithically integrate several FETs on a single die. Monolithic GaN integration has matured to
the point that complex circuits like a half-bridge gate driver with various features, such as cross-

24 JULY 2023 | www.powerelectronicsnews.com