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Smart Energy DESIGN
RATINGS TO MEET WIDE APPLICATION RANGE
Wolfspeed offers SiC discrete devices and modules that cover the industry’s widest application power
scale (Figure 2). The company’s MV/HV solutions, rated from 3.3-kV LM3 modules to 6.5-kV MM3 and
10-kV XHV-9 modules, address a broad range of voltage, current, and isolation requirements from the
applications discussed above.
System Benefits of
GaN and SiC Devices in
the Next Generation of
On-Board Chargers and
USB-C Adapters with
Figure 2: Wolfspeed's SiC portfolio offers renewable energy applications the power scalability from less than 2 kW into
the megawatt range Ultra-High Power Density
As a vertically integrated SiC supplier with the largest market share and growing, Wolfspeed has over By Matthias J. Kasper, principal engineer; Jon Azurza, senior staff engineer;
30 years of experience and millions of MOSFETs and diodes in the field operating for trillions of hours. and Gerald Deboy, distinguished engineer for Power Discretes and System
Engineering, all at Infineon Technologies
To talk to an expert about the benefits of SiC technology and the devices that best suit your application,
contact Wolfspeed. The adoption of wide-bandgap (WBG) power devices such as silicon carbide MOSFETs and gallium
nitride HEMTs is now in full progress across a wide range of market segments. In many cases, WBG
power devices are replacing their silicon counterparts and enable higher efficiencies in existing
References
systems. In other cases, such as the totem-pole configuration, WBG power devices enable a simple
option for bridgeless power-factor correction (PFC) with continuous-conduction modulation.
▶ Fraunhofer Institute for Solar Energy Systems. (2022).
1
In this article, we will outline how we derive optimal use cases for GaN and SiC power devices in a
“Photovoltaics Report.” holistic system optimization approach.
▶ IRENA. (2022). “World Energy Transitions Outlook 2022.” DEVICE TECHNOLOGY
2
ISBN: 978-92-9260-429-5. Infineon Technologies offers the whole spectrum of power semiconductor technologies ranging from
its established Si superjunction devices to SiC MOSFETs and GaN e-mode HEMTs. The company’s SiC
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