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Automotive
Figure 2: Time evolution of Toyota Group’s patent publications related to SiC. Patents published up to August 2021.
(Source: KnowMade)
Being that cameras, radar, and LiDAR are regarded as the three primary technologies that must be
coupled to create 3D mapping of the vehicle environment, Toyota Group’s early patenting work in
these areas has benefited the company’s modern technological advancements. However, the Japanese
company has decided to scale back its LiDAR R&D efforts in favor of systems that integrate and manage
numerous sensors, particularly cameras, in a vehicle.
CONCLUSION
Toyota’s effort in filing patents reflects its desire to play a significant role in the creation of cars of
the future. Toyota has submitted a considerable number of patent applications to cover everything
from materials to systems, including devices, control circuits, and packaging, in all key disciplines
(such as batteries, fuel cells, sensors, and power electronics). Furthermore, Toyota has broadened its
technological scope to establish itself as a leader in critical technologies of the past, present, and
future.
References
▶ KnowMade. (Sept. 27, 2022). “Insights on Toyota’s patent strategy for
1
next-generation vehicles.” Press release.
60 DECEMBER 2022 | www.powerelectronicsnews.com
SEMICONDUCTORS
Power GaN for Better
Power-Conversion
Efficiency
By Dilder Chowdhury, director of strategic marketing for power GaN
technology at Nexperia
Power gallium nitride FETs are increasingly making their way into mainstream markets by providing
the best power efficiency and most compact solution size. Brave innovators already benefit from
having disruptive GaN high-electron–mobility transistor (HEMT) technology as a key component
for their applications, as it offers the fastest transition/switching capability (highest dV/dt and
di/dt) and delivers the best efficiency, regardless of whether it is for low- or high-power–conversion
applications. Additionally, Nexperia power GaN FETs bring enhanced power density through improved
efficiency as a result of reduced conduction and switching losses combined with low-inductance
copper-clip packaging (CCPAK).
GaN FETs display the best performance in all power-conversion applications: server, computing,
industrial automation, telecom infrastructure, and automotive. In the volume/cost/performance
spectrum, power GaN FETs using standard silicon-based manufacturing infrastructure that is easily
scalable to larger-diameter wafers (200 mm) are at the forefront. And power GaN FET products are
being manufactured aggressively to address the volume and cost demands to support mainstream
challenges.
DECEMBER 2022 | www.powerelectronicsnews.com 61