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Design DESIGN
▶ L. Shu, J. Zhang, F. Peng, and Z. Chen. “Active current source IGBT gate drive
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with closed-loop di/dt and dv/dt control”. IEEE Trans. Power Electron., Vol.
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▶ Z. Wang, X. Shi, L. M. Tolbert, F. Wang, and B. J. Blalock. “A di/dt feedback-
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based active gate driver for smart switching and fast overcurrent protection
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2014.
▶ B. Zhang, S. Xie, J. Xu, Q. Qian, Z. Zhang, and K. Xu. “A magnetic coupling-
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based gate driver for crosstalk suppression of SiC MOSFETs”. IEEE Trans. Ind.
New Space-Vector–
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Modulation Scheme
for Hybrid Seven-Level
T C-HB Converter
2
By Maurizio Di Paolo Emilio, editor-in-chief of Power Electronics News and
EEWeb
Silicon carbide (SiC)-based multilevel converters have gained a lot of attention, 2–5 as they show
minor levels of power loss and high blocking voltage thanks to emerging SiC power modules.
Neutral-point–clamped (NPC) converters that cascade with an H-bridge converter or elsewise
6
with a T-type converter are the hybrid converters that allow a reduction in the amount of voltage
7
or current that flows through the device and also boost the output voltage. High flexibility is
provided by the multilevel space-vector modulation (SVM) to medium-voltage applications to
attain voltage balancing and potential optimization. But complex voltage vector space and high
redundancy complicate the computation. An SVM scheme is instead simple, is efficient, and
reduces the computational burden. Computation done in the six sectors belonging to the space
of the voltage vector has been simplified and reduced to only one sector. This means that vectors
in the remaining five sectors can be transformed to those that can be found in the first sector.
The original article can be found here.
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