Page 56 - EE Times Europe Magazine – November 2023
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         THE INDUSTRY
        Soitec’s SmartSiC to Hit the Road in 2024


        By Anne-Françoise Pelé


                  nly four years will have passed between Soitec’s decision to develop   Even if Soitec achieves its goal of a 30%
                  its SmartSiC technology and the launch of SmartSiC wafer production   market share by 2030, SmartSiC would still be
                  at its new fab in Bernin, France—and Soitec is promising that in less   a long way from becoming a market standard
                                                                                in EVs. However, longer mileage capability
       Othan a year, the first electric vehicles featuring power components     and fast-charging demand are driving the
        with SmartSiC technology inside will be on the road.                    development of 800-V battery systems, and
                                                                                Sabonnadière is convinced that SmartSiC will
          “To reinforce our position in the market for   worldwide. Silicon carbide devices have been   be the technology that enables EVs to travel
        innovative semiconductor materials, we have   a technology accelerator for EVs, increasing   500 km after recharging the battery for just
        diversified our activities around three divi-  the power density of the electronics system   10 minutes or so. “That is what will trigger
        sions: mobile communications, smart devices,   while reducing the overall size, weight and   mass adoption of EVs that truly meet users’
        and automotive and industrial,” said Pierre   cost of the vehicle.      needs,” he said.
        Barnabé, CEO of Soitec, at the Bernin 4 fab   Soitec anticipates the penetration of SiC
        inauguration ceremony in September. “This   in EVs to be about 70% and aims to make its   FROM LAB TO FAB
        new dedicated SmartSiC fab is part of this   SmartSiC technology a market standard for   Having emerged from a pilot line at Soitec’s
        dynamic. With a surface area of 2,500 square   150- and 200-mm SiC wafers.  Substrate Innovation Center within CEA-Leti
        meters, it will eventually produce 500,000   “There can be no innovation without a   in Grenoble, France, SmartSiC is an adapta-
        SmartSiC wafers per year, leading to the cre-  dynamic market,” Emmanuel Sabonnadière,   tion of Soitec’s proprietary SmartCut process
        ation of 400 direct jobs. SmartSiC embodies   vice president of the SiC program at Soitec,   to SiC. “It only took four years to go from lab
        our sustainable growth strategy.”   said at the press conference. “Today’s EV   to fab,” said Sandrine Chabanet, director for
          Bernin 4 represents a total investment of   market is growing by around 30% a year, to   innovation at Soitec. “In 2019, we decided on
        approximately €400 million, including    approximately 20 million EVs in 2025 and    a SmartSiC solution. In 2020, we brought out
        €80 million for the building and cleanroom   45 million EVs in 2030, which means that   our first 150-mm wafers, thanks to CEA-Leti.
        and more than €300 million for equipment.   around half of all new registrations in 2030   In 2021, we were able to build our pilot line at
        Soitec received 30% of this amount in subsi-  will be EVs. An automotive revolution hap-  CEA-Leti. In 2022, we qualified our 200-mm
        dies, Cyril Menon, Soitec’s operations senior   pens once every 100 years, and Soitec didn’t   wafers. And today, we are inaugurating the
        executive vice president, said during a press   want to miss out.”      Bernin 4 fab.”
        conference before the ceremony.       Soitec derived its first revenue from its SiC   SmartSiC is made of a very thin layer from
          “In less than 18 months, we have gone   business in the fourth quarter of fiscal year   a monocrystalline SiC donor wafer, trans-
        from a wasteland to an equipped fab ready to   2023 and expects rapid growth in the years   ferred and bonded onto a highly conductive
        produce and send samples around the world,”   ahead. “In fiscal year 2026, SiC will account   carrier wafer made of polycrystalline SiC.
        Menon said.                         for 10% of our US$2.1 billion revenue, and   Soitec claims SmartSiC substrates enable new
                                            by 2030, we expect our SmartSiC [products]   levels of performance and energy efficiency
        THE ROAD TO 800-V EVs               to account for a 30% share of the SiC market,   compared with traditional bulk SiC through
        In line with carbon-emission–reduction   which will then represent 70% of the EV mar-  higher donor-wafer reusability, improved
        trajectories, EV adoption has been surging   ket,” Barnabé said.        yields and lower die sizes.




























        Aerial view of Soitec’s Bernin 4 extension (Source: Soitec)

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