Page 3 - PEN eBook March 2022
P. 3

VIEWPOINT












            Wide-Bandgap



            Semiconductors





            Power electronics involves a whole range of critical applications, from electrification to smart grids.
            It is a fundamental pillar for the entire industry to meet climate-change demands and involves

            increasing energy efficiency, reducing our carbon footprint through new materials, and adopting
            new circuit topologies. Physical limitations prevent current silicon technology from achieving the
            higher power density, miniaturization, and energy-conversion efficiency that the market needs from
            power products to meet growing environmental concerns. Wide-bandgap (WBG) silicon carbide and
            gallium nitride materials enable significant efficiency improvements in applications such as traction
            inverters for SiC and adapters/chargers for GaN. SiC and GaN technologies have grown enormously
            over the past few years, proving to be commercially available energy-saving technologies. These

            two WBG  semiconductors  complement  each  other to  address  a wide variety  of  applications  in
            which  energy  efficiency  is  vital.  However,  silicon  products  are  expected  to  co-exist  with  WBG
            products due to their cost-effectiveness in some low-power applications.


            In this issue, Infineon Technologies’ Zhong Fang Wang, principal applications engineer, and Matt
            Yang, senior staff applications engineer, explain how Infineon’s CoolGaN Integrated Power Stage
            technology can be applied in active-clamp flyback, hybrid flyback, and LLC converter topologies.
            This way, designing charger and adapter solutions is made quicker and easier, leading to smaller
            and lighter products or products that provide more power from a device of the same size to charge

            devices faster or charge multiple devices from one adapter.


            Other  topics  are  drain-current  characteristics  of  enhancement-mode  GaN  HEMTs,  thermal
            management, electric vehicles, battery technology, and wireless charging. A combination of electrical
            failure analysis (EFA) and physical failure analysis (PFA) can lead to a deeper understanding of fault
            mechanisms and, ultimately, improved performance, reliability, and manufacturing yield. We will
            analyze advanced EFA and PFA analytical tools to localize and characterize subtle electrical issues

            faster and with greater accuracy in WBG materials.


            Yours Sincerely,
            Maurizio Di Paolo Emilio
            Editor-in-Chief, Power Electronics News




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