Page 58 - Power Electronics News - December 2020
P. 58
NEWS & PODCAST News & Podcast
Microchip Revs Up Motor Control Diodes: high-voltage analog
Support with New Devices multiplexers support IIoT
Company further simplifies system development Diodes announces the introduction of the PS508
with products, tools, a torque-maximizing algo- and PS509 analog multiplexers that are capable
rithm and additions to industry’s broadest offer- of switching signal voltages of up to 36V in an in-
ing of motor control reference designs dustrial environment. The high voltage capability
UnitedSiC Expands Schottky Diode UnitedSiC signs distribution As electric motors proliferate across a growing of the devices will support industrial IoT (IIoT) ap-
Portfolio agreement with EDOM technology range of system applications, developers need plications using multiple sensors, including factory
to accelerate SiC adoption products and tools that ensure systems run as automation and process control, battery monitoring
UnitedSiC has announced four new Junction Bar- efficiently as possible while reducing board size, systems, and test and measurement equipment.
rier Schottky (JBS) diodes to complement its FET UnitedSiC has entered into a distribution agree- component count and energy consumption. Mi- The PS508 and PS509 provide single-ended or
and JFET transistor products. With the industry’s ment with EDOM Technology. EDOM will partner crochip Technology Inc today announced it has differential configurations. A single PS509 offers
best surge current performance, the UJ3D 1200V with UnitedSiC to distribute its product portfolio expanded its motor control offering with digital differential 4:1 or dual 4:1 signal-end channels.
and 1700V devices are part of the company’s 3rd in Asia to customers in high-growth applica- signal controllers (DSCs) and microcontrollers The PS508 offers an 8:1 ratio for single-ended
generation of SiC Merged-PiN-Schottky (MPS) tions such as electric vehicles, battery charging, (MCUs) that are supported by design tools, devel- switching. Address lines are used to select the
diodes. Possessing a VF x Qc figure of merit (FoM) IT infrastructure, renewable energy and circuit opment hardware input/output combination.
that is at least 12-15% better than what diodes protection. UnitedSiC develops innovative silicon
from other manufacturers can achieve, these SiC carbide FET and diode power semiconductors,
SB diodes are highly optimized for power system DC-DC converters and traction drives. FOR MORE INFORMATION > FOR MORE INFORMATION >
designs requiring elevated efficiency levels.
NXP advances 5G with new GaN fab
FOR MORE INFORMATION > FOR MORE INFORMATION > in Arizona
NXP Semiconductors announced the grand open-
Space Level Qualified 40 V to 300 Pioneering Liquid Compression ing of its 150 mm (6-inch) RF Gallium Nitride (GaN)
V Rad Hard Enhancement-Mode Molding Material from Henkel fab in Chandler, Arizona, the most advanced fab
Gallium Nitride (eGaN) Power Advances Fan-In and Fan- Out dedicated to 5G RF power amplifiers in the United
Transistors Wafer-Level Packaging States. The new internal factory combines NXP’s
expertise in RF power and its high-volume manu-
EPC Space announced a family of Rad Hard en- Henkel Corporation announced the commercial facturing know-how, resulting in streamlined inno- PowerUP Podcasts
hancement mode power transistors spanning a availability of LOCTITE ECCOBOND LCM 1000AF, a vation that supports the expansion of 5G base sta- PowerUP podcasts will connect with the world’s
range of 40 Volts to 300 Volts, and 4 Amperes breakthrough encapsulation material that lever- tions and advanced communication infrastructure leading power electronics experts to explain how
to 30 Amperes. These power transistors demon- ages a unique anhydride-free resin platform to in the industrial, aerospace and defense markets. the technology is evolving, and what those changes
strate significant performance advantages over enable thorough protection, improved warpage With 5G, the density of RF solutions required per means for every aspect of the industry. Click here
competitive silicon-based Rad Hard power MOS- control and fine gap filling for fan-in and fan-out antenna has exponentially increased – yet main- to discover the latest episode!
FETs. EPC Space technology produces devices wafer-level packages (FI WLPs, FO WLPs). LOC- taining the same box size and reducing power
that are smaller, have lower resistance. TITE ECCOBOND LCM 1000AF.
consumption is mandatory.
FOR MORE INFORMATION > FOR MORE INFORMATION > FOR MORE INFORMATION > FOR MORE INFORMATION >
58 DECEMBER 2020 | www.powerelectronicsnews.com DECEMBER 2020 | www.powerelectronicsnews.com 59
