Page 64 - EE Times Europe Magazine – November 2023
P. 64

Providing next level of system e iciency and performance
          Industry’s first 15 V trench power


          MOSFETs with OptiMOS™ 7 technology






          Infineon introduces the first 15 V trench power MOSFETs in the industry, utilizing the brand-new
          system- and application- optimized OptiMOS™ 7 MOSFET technology. The product portfolio
          includes PQFN 3.3x3.3 Source-Down variants and PQFN 2x2, ensuring flexible and optimal PCB

          design. Compared to the current OptiMOS™ 5 25 V solutions, this family o‰ers an impressive
          reduction in R DS(on)  and FOMQ  by 30% and 40% for FOMQ OSS . The advanced packaging
                                 g
          technology makes thermal management easy, pushing power density and e‰iciency to the

          next level. These MOSFETs are best fit in high-ratio DC-DC conversion, enabling high-density

          and e‰icient power distribution in datacom, server, and artificial intelligence applications.

          Key features
          ‒ New 15 V trench power MOSFET technology
          ‒ Ultra-low R DS(on)
          ‒ Outstanding FOMQ OSS /FOMQ g
          ‒ Ultra-low package parasitics
          ‒ Center-Gate footprint











                      For more details scan the QR code.
   59   60   61   62   63   64