Page 59 - EE Times Europe Magazine | March 2020
P. 59
Power Electronics
Conference
Technical Trends with
Wide Bandgap Devices
December 14-15 2020
Hilton, Munich Airport
Power Electronics is rapidly moving towards Wide Bandgap Semiconductors, as the key for the next
essential step in energy efficiency lies in the use of new materials, such as GaN (gallium nitride) and
SiC (silicon carbide) which allow for greater power efficiency, smaller size, lighter weight and lower
overall cost.
Wide Bandgap Semiconductors are transforming power electronics designs across many applicati-
ons including data centers, renewable energy and automotive as well as many others.
Our technical conference will explain why, how and where this is happening. Conference delegates
will be provided with the knowledge necessary to make their decisions on where, how and which
Wide Bandgap platforms and devices can play a role in current or upcoming designs.
POWER-CONFERENCE.COM
