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APEC - Thermal Management PCIM - SEMICONDUCTORS
MOTOR CONTROL
The EiceDRIVER 6EDL7141 has an SPI interface for the configuration gate drive outputs, as well as
an integrated power supply and two charge pumps to power all system functions. The IC offers an
operating voltage ranging from 5.5 to 60 V and a configurable drive current of up to 1.5 A, driving
various MOSFETs and programmable logic to suit the application. The intelligent driver features an
adjustable configuration with different current levels and timing options to control slew rate and
minimize system electromagnetic interference (EMI).
Applications range from robotics to power tools and drones. As shown in Figure 4, the three half-
bridge drivers and an operational amplifier, LDO, and buck converter are integrated in the same
package. “Basically, power management is key, and the operational amplifiers are intended for
motor control through Hall-sensors or shunt resistors,” said Vukicevic.
The three-phase gate driver based on charge pumps supports 100% duty cycle and allows
standard-level MOSFET driving even at low battery voltages thanks to the dual charge pump.
To allow optimization for minimum EMI, the 6EDL7141 supports both adjustable gate driver supply A Unified View and
voltage setting between 7 V, 10 V, 12 V, and 15 V and adjustable gate driver slew rate configuration
Price-Performance
with several levels/timings.
“Hardware protections are implemented to avoid destruction of the system,” said Vukicevic. “In
particular, we have OCP [overcurrent protection] at shunt or R , temperature warning and Analysis of IGBTs &
DS(on)
shutdown, rotor-locked detection based on Hall sensor and memory fault. Moreover, 6EDL7141 will
set the gate driver out puts to a predefined status when a braking event occurs.” GaN, SiC, and Silicon FETs
She noted that all of the 6EDL7141 settings can be easily changed with the available GUI. The aim of By Maurizio Di Paolo Emilio, editor-in-chief of Power Electronics News and
this tool is to make design quick and easy by optimizing parameters such as “brake config uration” European correspondent for EE Times
and “PWM freewheeling mode” and various circuit configurations.
When designing power electronics, we need to evaluate all business needs and technical
requirements to optimize the design cycle time enabling higher-performance systems at a lower
cost. This is the goal of DiscoverEE and of its founder, Shishir Rai, who spoke during PCIM about
a unified view of all the key gallium nitride, silicon carbide, and silicon MOSFET and IGBT power
devices being promoted in the market today, with their performance versus cost analysis.
In this article, circuit operation was considered at 400 V, 15 A with duty cycle of 0.5 to deliver 3 kW
For More Information of power at switching frequencies of 10, 50, and 100 kHz. Over 25,000 power devices from over 35
manufacturers were considered for this study, and the power loss of each device was calculated
from their datasheet specifications. The total device power loss target was less than 40 W and was
▶ Live Coverage of APEC 2021 calculated by considering conduction loss, switching loss, and diode reverse-recovery loss, as these are
the major contributors to device power loss. They are estimated by the equations indicated in Figure 1.
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