Page 60 - EE Times Europe Magazine | April2019
P. 60
NEW: CoolSiC™ trench MOSFETs 650 V
Top efficiency / density (> 97%, > 35 W/inch ) for HV SMPS
3
Utilizing the best of SiC
Combined with unique features enhancing performance, robustness and ease of use.
State-of-the-art trench semiconductor process, optimized to
minimize losses in applications and maximize reliability in operation.
What else is special?
› Gate-oxide reliability
› Robustness against parasitic turn-on
› Robust body diode
› Wide V range for ease of use
GS
› Short-circuit capability and thermal conductivity (suitability for harsh-condition /
high-temperature operation, low dependency of R with the temperature)
DS(on)
Interested in more details?
www.infineon.com/coolsic-mosfet-discretes
