Page 35 - PEN eBook October 2025
P. 35
SMART ENERGY AEROSPACE
Rad-Hard GaN FET
Supports
High-Power Satellite
and Propulsion Systems
By Diego de Azcuénaga, contributing writer for Power Electronics News
EPC Space has introduced an industry-leading
300-V radiation-hardened (rad-hard) GaN FET intended
for input DC/DC converters used in environments
where thermal and radiation limitations are extreme.
The EPC7030MSH brings its innovative design to
boost performance in high-voltage, high-power space
applications, such as next-generation satellite power
systems and electric propulsion platforms.
In an exclusive interview with Power Electronics EPC Space’s Maurizio Salato
News, Maurizio Salato, VP of engineering at EPC Space,
noted that this device delivers exceptional efficiency,
power density, and radiation tolerance to support “In line with its high-power application capability, it
higher-voltage bus architectures and greater power also offers the lowest thermal resistance in its class,
requirements. substantially simplifying thermal management in
air- and space-borne systems,” Salato said.
PLAYING A KEY ROLE IN
SPACE ENVIRONMENTS On the propulsion front, ion thrusters, either
The EPC7030MSH is the latest entry in an expanding electrostatic or electromagnetic, are a popular choice
rad-hard GaN product line. Specifically, it is the firs for satellite maneuvering. They require several kilowatts
300-V, 50-A, hermetically packaged, radiation-proven of electrical power to be provided and controlled at
power transistor on the market. very high voltages, typically several kilovolts.
OCTOBER 2025 | www.powerelectronicsnews.com 35
