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SEMICONDUCTORS                                                                                    SEMICONDUCTORS

           Concurrently, for the µLED sector, Hexagem is      strategy—almost impossible in a very highly
          pioneering a relaxed indium gallium nitride (InGaN)   competitive market. The company’s disruptive potential
          technology on silicon or sapphire wafers, which     has attracted early investor confidence, evidenced by
          facilitates high-efficiency, sub-micron-pixel red, green,   funding from institutional investors such as Almi Invest,
          and blue light emission.                            European Innovation Council (EIC Fund), and Horizon
                                                              Europe. This strategic positioning allows Hexagem to
          CORE TECHNOLOGY AND INNOVATION                      target high-growth, high-value markets where silicon

           The strategic importance of Hexagem’s work is      has reached its physical limits, pushing the boundaries
          underscored by the pivotal role GaN plays in modern   of what GaN can achieve and potentially capturing a
          electronics—a wide-bandgap material offering        premium segment of the market.
          enhanced energy efficiency, higher temperature and
          voltage withstand, and faster switching speeds than   WHY SWEDEN PRODUCES
          traditional silicon. These characteristics make it   SUCCESSFUL STARTUPS
          suitable for energy-smart applications such as electric   Sweden’s ability to foster cutting-edge enterprises
          vehicles, 5G networks, aerospace, solar inverters,   hinges on a deep culture of innovation, substantial
          motor drives, and mobile fast charging.             investments in R&D, supportive business-friendly
                                                              policies, and a pronounced national focus on
           Hexagem’s primary innovation lies in its unique    sustainable growth.
          approach to growing GaN-on-Si wafers. Traditional
          GaN growth on silicon often faces challenges due to   The Swedish startup ecosystem actively cultivates
          lattice mismatch and differences in thermal expansion   emerging companies through various mechanisms.
 Hexagem: Pioneering   coefficients, leading to defect buildup.  These include prominent innovation hubs, such as
                                                              Ideon Science Park in Lund, which provide essential
                                                              resources such as collaborative workspaces, expert
           Similarly, µLEDs are poised to revolutionize display
 GaN Innovation Within   technology for applications such as   mentorship, and invaluable networking opportunities
          augmented/virtual/mixed reality, smartwatches,
                                                              crucial for early-stage startup growth.
          wearables, head-up displays, and mobile phones.
                                                               Furthermore, the startup landscape offers diverse
 the Nordic Ecosystem  GaN MARKET POSITIONING                 funding opportunities, spanning from venture capital
           Hexagem’s leadership draws on a competitive
                                                              and angel investors to public grants provided by
          advantage derived from reducing defect densities by an   agencies such as Vinnova and Tillväxtverket, the Agency
 By Filippo Di Giovanni, contributing writer for Power Electronics News  order of magnitude, with a target of reaching   for Economic and Regional Growth controlled by the
          10 million defects per square centimeter. This enables   Ministry of Climate and Enterprise.
          the production of thicker, crack-free GaN layers crucial
 Startups have become the modern engine of   HEXAGEM: A PLAYER IN   for high-voltage vertical devices, all while maintaining   Sweden’s ability to translate deep scientific research
 innovation—lean, fast, and focused on solving problems   GaN INNOVATION  a cost structure comparable to existing silicon-based   into commercially viable technologies is exemplified
 that established companies can’t address with the   Hexagem stands at the forefront of gallium nitride   materials.  by Norstel, a startup specializing in silicon carbide
 same urgency and agility.  semiconductor technology. As a spinout from Lund   substrates, acquired by STMicroelectronics (ST). For ST,
 University, its core mission is to develop high-quality   This approach prioritizes quality and performance   the deal provided a significant strategic advantage and
 Sweden is renowned for nurturing global tech   III-nitrides on silicon wafers, targeting two rapidly   rather than engaging in a pure cost-play   contributed to its success as a global leader in SiC.
 leaders such as Spotify, Klarna, and Ericsson and for   expanding and critical markets: advanced power
 helping launch influential platforms such as Skype.   electronics and revolutionary µLED displays. The
 These ventures often grow out of deep collaborations   company leverages its patented GaN coalescence
 between universities and industry, reflecting the   technology to achieve low defect densities and thick
 nation’s strong investment in research and innovation.   GaN layers on silicon, essential for enabling 1,200-V
 Yet even in this fertile environment, the journey from   vertical device designs in power applications.
 groundbreaking scientific discovery to scalable product
 remains a formidable challenge.  The company’s technological foundation is deeply
 rooted in the extensive research conducted by
 One such example is Hexagem, a Swedish startup   Samuelson. The key individuals who co-founded
 spun out from Lund University in 2015. Built on years of   Hexagem and continue to lead its strategic direction
 pioneering research led by Professor Lars Samuelson,   include Bart Markus (co-founder and executive
 Hexagem specializes in III-nitride epitaxy and advanced   chairman), Jonas Ohlsson (co-founder and CTO), and
 materials characterization, a highly sophisticated niche   Kristian Storm (co-founder and CPO).
 with the potential to transform both power electronics
 and microLED (µLED) displays.  Figure 1: GaN-on-Si low-dislocation process steps (Source: Hexagem)

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