The industry is beginning to strongly embrace the benefits (performance/cost) of wide bandgap materials such as gallium nitride (GaN) and silicon carbide (SiC). Power semiconductors based on GaN and SiC technologies provide a path to efficient power supply across industrial environments while also complementing the expansion of the renewable energy segment. In the coming years, we will increasingly see a trend towards more monolithic integration of functions within GaN-based power devices, and SiC FETs solutions that include integrated gate drivers, temperature and current sense and speed control. Vehicle electrification and 5G communications will be major topics. Electric vehicles present many new opportunities for high-power GaN and SiC products. Accessing the quality and durability of electronic devices is done by testing and measuring the staying power. Testing to evaluate Gallium Nitride (GaN) or Silicon Carbide value is imperative, because of its immense potential since its inception to achieve more efficient power conversion, as the key disruptor in power electronics applications.
 
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